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Articles (117)
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1

An HSPICE HBT model for InP-based single HBTs

Yang, K., Gutierrez-Aitken, A.L., Zhang, X., Bhattacharya, P., Haddad, G.I.

Journal:

IEEE Transactions on Electron Devices

Année:

1996

Langue:

english

Fichier:

PDF, 330 KB

english, 1996

2

A DC-20-GHz InP HBT balanced analog multiplier for high-data-rate direct-digital modulation and fiber-optic receiver applications

Kobayashi, K.W., Desrosiers, R.M., Gutierrez-Aitken, A., Cowles, J.C., Tang, B., Tran, L.T., Block, T.R., Oki, A.K., Streit, D.C.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Année:

2000

Langue:

english

Fichier:

PDF, 365 KB

english, 2000

3

InP HBT Transferred to Higher Thermal Conductivity Substrate

Scott, D.W., Monier, C., Wang, S., Radisic, V., Phuong Nguyen, Cavus, A., Deal, W.R., Gutierrez-Aitken, A.

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 341 KB

english, 2012

4

High-performance monolithic pin-MODFET transimpedance photoreceiver

Gutierrez-Aitken, A.L., Bhattcharya, P., Chen, Y.C., Pavlidis, D., Brock, T.

Journal:

IEEE Photonics Technology Letters

Année:

1993

Langue:

english

Fichier:

PDF, 278 KB

english, 1993

5

7.1 GHz bandwidth monolithically integrated In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As PIN-HBT transimpedance photoreceiver

Cowles, J., Gutierrez-Aitken, A.L., Bhattacharya, P., Haddad, G.I.

Journal:

IEEE Photonics Technology Letters

Année:

1994

Langue:

english

Fichier:

PDF, 331 KB

english, 1994

6

A "cold" InP-based tunneling injection laser with greatly reduced Auger recombination and temperature dependence

Yoon, H., Gutierrez-Aitken, A.L., Jambunathan, R., Singh, J., Bhattacharya, P.K.

Journal:

IEEE Photonics Technology Letters

Année:

1995

Langue:

english

Fichier:

PDF, 286 KB

english, 1995

7

16-GHz bandwidth InAlAs-InGaAs monolithically integrated p-i-n/HBT photoreceiver

Gutierrez-Aitken, A.L., Yang, K., Zhang, X., Haddad, G.I., Bhattacharya, P., Lunardi, L.M.

Journal:

IEEE Photonics Technology Letters

Année:

1995

Langue:

english

Fichier:

PDF, 274 KB

english, 1995

8

Ultrahigh-speed direct digital synthesizer using InP DHBT technology

Gutierrez-Aitken, A., Matsui, J., Kaneshiro, E.N., Oyama, B.K., Sawdai, D., Oki, A.K., Streit, D.C.

Journal:

IEEE Journal of Solid-State Circuits

Année:

2002

Langue:

english

Fichier:

PDF, 333 KB

english, 2002

9

[IEEE Conference Digest. 15th IEEE International Semiconductor Laser Conference - Haifa, Israel (13-18 Oct. 1996)] Conference Digest. 15th IEEE International Semiconductor Laser Conference - 0.98 μm multiple quantum well tunneling injection lasers extrapolated

Zhang, X., Yuan, Y., Gutierrez-Aitken, A., Bhattacharya, P.

Année:

1996

Langue:

english

Fichier:

PDF, 189 KB

english, 1996

10

[IEEE 2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers - Boston, MA, USA (11-13 June 2000)] 2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096) - An 18-21 GHz InP DHBT linear microwave Doherty amplifier

Kobayashi, K.W., Oki, A.K., Gutierrez-Aitken, A., Chin, P., Li Yang,, Kaneshiro, E., Grossman, P.C., Sato, K., Block, T.R., Yen, H.C., Streit, D.C.

Année:

2000

Langue:

english

Fichier:

PDF, 257 KB

english, 2000

11

(Invited) Diverse Accessible Heterogeneous Integration (DAHI) Foundry at Northrop Grumman Aerospace Systems (NGAS)

Gutierrez-Aitken, A., Scott, D., Sato, K., Poust, B., Nakamura, E., Thai, K., Chan, W., Kaneshiro, E., Monier, C., Smorchkova, I., Lin, N., Ferizovic, D., Zeng, X., Oki, A., Kagiwada, R.

Journal:

ECS Transactions

Année:

2016

Langue:

english

Fichier:

PDF, 1.25 MB

english, 2016

12

Determination of stress distribution in III–V single crystal layers for heterogeneous integration applications

M. Jackson, M. S. Goorsky, A. Noori, S. Hayashi, R. Sandhu, B. Poust, P. Chang-Chien, A. Gutierrez-Aitken, R. Tsai

Journal:

physica status solidi (a)

Année:

2007

Langue:

english

Fichier:

PDF, 683 KB

english, 2007

13

Responsivity and impact ionization coefficients of Si1-xGex photodiodes

Jinju Lee, Gutierrez-Aitken, A.L., Li, S.H., Bhattacharya, P.K.

Journal:

IEEE Transactions on Electron Devices

Année:

1996

Langue:

english

Fichier:

PDF, 556 KB

english, 1996

14

0.98-μm multiple-quantum-well tunneling injection laser with 98-GHz intrinsic modulation bandwidth

Zhang, X., Gutierrez-Aitken, A., Klotzkin, D., Bhattacharya, P., Caneau, C., Bhat, R.

Journal:

IEEE Journal of Selected Topics in Quantum Electronics

Année:

1997

Langue:

english

Fichier:

PDF, 134 KB

english, 1997

15

Tunneling injection lasers: a new class of lasers with reduced hot carrier effects

Bhattacharya, P., Singh, J., Yoon, H., Xiangkun Zhang, Gutierrez-Aitken, A., Yeeloy Lam

Journal:

IEEE Journal of Quantum Electronics

Année:

1996

Langue:

english

Fichier:

PDF, 1.01 MB

english, 1996

16

An Ultra-Wideband 7-Bit 5-Gsps ADC Implemented in Submicron InP HBT Technology

Chan, B., Oyama, B., Monier, C., Gutierrez-Aitken, A.

Journal:

IEEE Journal of Solid-State Circuits

Année:

2008

Langue:

english

Fichier:

PDF, 2.12 MB

english, 2008

17

A 0.25 m InP DHBT 200 GHz+ Static Frequency Divider

D'Amore, M., Monier, C., Lin, S.T., Oyama, B., Scott, D.W., Kaneshiro, E.N., Ping-Chih Chang, Sato, K.F., Niemi, A., Linh Dang, Cavus, A., Gutierrez-Aitken, A., Oki, A.K.

Journal:

IEEE Journal of Solid-State Circuits

Année:

2010

Langue:

english

Fichier:

PDF, 3.51 MB

english, 2010

18

A 44-GHz-high IP3 InP HBT MMIC amplifier for low DC power millimeter-wave receiver applications

Kobayashi, K.W., Cowles, J.C., Tran, L.T., Gutierrez-Aitken, A., Nishimoto, M., Elliott, J.H., Block, T.R., Oki, A.K., Streit, D.C.

Journal:

IEEE Journal of Solid-State Circuits

Année:

1999

Langue:

english

Fichier:

PDF, 565 KB

english, 1999

19

A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth

Kobayashi, K.W., Oki, A.K., Tran, L.T., Cowles, J.C., Gutierrez-Aitken, A., Yamada, F., Block, T.R., Streit, D.C.

Journal:

IEEE Journal of Solid-State Circuits

Année:

1999

Langue:

english

Fichier:

PDF, 415 KB

english, 1999

20

Ultrahigh-efficiency power amplifier for space radar applications

Quach, T.K., Watson, P.M., Okamura, W., Kaneshiro, E.N., Gutierrez-Aitken, A., Block, T.R., Eldredge, J.W., Jenkins, T.J., Kehias, L.T., Oki, A.K., Sawdai, D., Welch, R.J., Worley, R.D.

Journal:

IEEE Journal of Solid-State Circuits

Année:

2002

Langue:

english

Fichier:

PDF, 565 KB

english, 2002

21

[IEEE GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1988 - Atlanta, GA, USA (1-4 Nov. 1998)] GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) - A low phase noise W-band InP-HBT monolithic push-push VCO

Kobayashi, K.W., Cowles, J., Tran, L.T., Gutierrez-Aitken, A., Block, T., Yamada, F., Oki, A.K., Streit, D.C.

Année:

1998

Langue:

english

Fichier:

PDF, 368 KB

english, 1998

22

[IEEE IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. - Palm Springs, CA, USA (2005.11.2-2005.11.2)] IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. - The future of compound semiconductors for aerospace and defense applications

Streit, D.C., Gutierrez-Aitken, A., Wojtowicz, M., Lai, R.

Année:

2005

Langue:

english

Fichier:

PDF, 223 KB

english, 2005

23

[IEEE 1999 IEEE Radio Frequency Integrated Circuits Symposium - Anaheim, CA, USA (13-15 June 1999)] 1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) - 15 dB gain, DC-20 GHz InP HBT balanced analog mixer and variable gain amplifier with 27 dB of dynamic range

Kobayashi, K.W., Gutierrez-Aitken, A., Cowles, J., Tang, B., Desrosiers, R., Medvedev, V., Tran, L.T., Block, T.R., Oki, A.K., Streit, D.C.

Année:

1999

Langue:

english

Fichier:

PDF, 455 KB

english, 1999

24

[IEEE GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 - Baltimore, MD, USA (21-24 Oct. 2001)] GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) - Broadband class-E power amplifier for space radar application

Quach, T., Watson, P., Okamura, W., Kaneshiro, E., Gutierrez-Aitken, A., Block, T., Eldredge, J., Jenkins, T., Kehias, L., Oki, A., Sawdai, D., Welch, R., Worley, R.

Année:

2001

Langue:

english

Fichier:

PDF, 399 KB

english, 2001

25

[IEEE IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. - Palm Springs, CA, USA (2005.11.2-2005.11.2)] IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. - An indium phosphide X-band class-E power MMIC with 40% bandwidth

Watson, P., Quach, T., Axtel, H., Gutierrez-Aitken, A., Kaneshiro, E., Lee, W., Mattamana, A., Oki, A., Orlando, P., Patel, V., Sawdai, D.

Année:

2005

Langue:

english

Fichier:

PDF, 329 KB

english, 2005

26

[IEEE Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM - Nara, Japan (14-18 May 2001)] Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) - Ultra-efficient X-band and linear-efficient Ka-band power amplifiers using indium phosphide double heterojunction bipolar transistors

Quach, T., Okamura, W., Gutierrez-Aitken, A., Jenkins, T., Kaneshiro, E., Kehias, L., Sawdai, D., Watson, P., Welch, R., Worley, R., Yen, H.C.

Année:

2001

Langue:

english

Fichier:

PDF, 398 KB

english, 2001

27

[IEEE Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials - Williamsburg, VA, USA (14-18 May 2000)] Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) - A 0.5 watt-40% PAE InP double heterojunction bipolar transistor K-band MMIC power amplifier

Kobayashi, K.W., Oki, A.K., Yang, L.W., Gutierrez-Aitken, A., Chin, P., Sawdai, D., Okamura, W., Lester, J., Kaneshiro, E., Gorssman, P.C., Sato, K., Block, T.R., Yen, H.C., Streit, D.C.

Année:

2000

Langue:

english

Fichier:

PDF, 383 KB

english, 2000

28

InP HBT/Si CMOS-Based 13-b 1.33-Gsps Digital-to-Analog Converter With > 70-dB SFDR

Oyama, Bert, Ching, Daniel, Khanh Thai,, Gutierrez-Aitken, Augusto, Patel, Vipul J.

Journal:

IEEE Journal of Solid-State Circuits

Année:

2013

Langue:

english

Fichier:

PDF, 3.04 MB

english, 2013

29

[IEEE 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - La Jolla, CA, USA (2012.10.14-2012.10.17)] 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - InP HBT/Si CMOS-Based 13-Bit 1.33Gsps Digital-to-Analog Converter with >70 dB SFDR

Oyama, B., Ching, D., Thai, K., Gutierrez-Aitken, A., Cohen, N., Scott, D., Hennig, K., Kaneshiro, E., Nam, P., Chen, J., Chang-Chien, P., Patel, V. J.

Année:

2012

Langue:

english

Fichier:

PDF, 843 KB

english, 2012

30

[IEEE 2001 IEEE MTT-S International Microwave Symposium Digest - Phoenix, AZ, USA (20-25 May 2001)] 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) - A 16-element reflection grid amplifier with improved heat sinking

Guyette, A., Swisher, R., Lecuyer, F., Al-Zayed, A., Kom, A., Su-Tak Lei,, Oliveira, M., Ping Li,, De Lisio, M., Sato, K., Oki, A., Gutierrez-Aitken, A., Kagiwada, R., Cowles, J.

Année:

2001

Langue:

english

Fichier:

PDF, 429 KB

english, 2001

31

[IEEE GaAs IC Symposium. 21st Annual. Technical Digest 1999 - Monterey, CA, USA (17-20 Oct. 1999)] GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) - Tunable linearity characteristics of a DC-3 GHz InP HBT active feedback amplifier

Kobayashi, K.W., Gutierrez-Aitken, A., Grossman, P.C., Yang, L., Kaneshiro, E., Block, T.R., Oki, A.K., Streit, D.C.

Année:

1999

Langue:

english

Fichier:

PDF, 425 KB

english, 1999

32

[IEEE GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 - Baltimore, MD, USA (21-24 Oct. 2001)] GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) - Ultra high speed direct digital synthesizer using InP DHBT technology

Gutierrez-Aitken, A., Matsui, J., Kaneshiro, E., Oyama, B., Sawdai, D., Oki, A., Streit, D.

Année:

2001

Langue:

english

Fichier:

PDF, 379 KB

english, 2001

33

[IEEE 2005 International Semiconductor Device Research Symposium - Bethesda, Maryland, USA (Dec. 7-9, 2005)] 2005 International Semiconductor Device Research Symposium - Ultra-low-power HEMT and HBT devices and circuit demonstrations

Lange, M.D., Cavus, A., Tsai, R.S., Monier, C., Deal, W.R., Chan, B., Cox, A.C., Pascua, D.G., Sandhu, R.S., Hsing, R., Poust, B.D., Kraus, J.L., Nam, P.S., Lee, L.J., Li, D., Gutierrez-Aitken, A.L.,

Année:

2005

Langue:

english

Fichier:

PDF, 127 KB

english, 2005

34

235 GHz Amplifier Using 150 nm InP HBT High Power Density Transistor

Radisic, Vesna, Scott, Dennis, Wang, Sujane, Cavus, Abdullah, Gutierrez-Aitken, Augusto, Deal, William R.

Journal:

IEEE Microwave and Wireless Components Letters

Année:

2011

Langue:

english

Fichier:

PDF, 276 KB

english, 2011

35

[IEEE GaAs IC Symposium. 21st Annual. Technical Digest 1999 - Monterey, CA, USA (17-20 Oct. 1999)] GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) - High linearity K-band InP HBT power amplifier MMIC with 62.8% PAE at 21 GHz

Yang, L.W., Kobayashi, K.W., Steit, D.C., Oki, A.K., Yen, H.C., Grossman, P.C., Block, T.R., Tran, L.T., Gutierrez-Aitken, A., Callejo, L.G., Macek, J., Maas, S.

Année:

1999

Langue:

english

Fichier:

PDF, 316 KB

english, 1999

36

[IEEE GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1988 - Atlanta, GA, USA (1-4 Nov. 1998)] GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) - Monolithic 14 GHz wideband InP HBT BPSK modulator

Desrosiers, R., Cowles, J., Hornbuckle, C., Gutierrez-Aitken, A., Becker, J.

Année:

1998

Langue:

english

Fichier:

PDF, 484 KB

english, 1998

37

[IEEE 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Monterey, CA, USA (2010.10.3-2010.10.6)] 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Advanced Heterogeneous Integration of InP HBT and CMOS Si Technologies

Gutierrez-Aitken, Augusto, Chang-Chien, Patty, Scott, Dennis, Hennig, Kelly, Kaneshiro, Eric, Nam, Peter, Cohen, Neir, Ching, Daniel, Thai, Khanh, Oyama, Bert, Zhou, Joe, Geiger, Craig, Poust, Ben, Pa

Année:

2010

Langue:

english

Fichier:

PDF, 913 KB

english, 2010

38

Design, modeling, and characterization of monolithically integrated InP-based (1.55 μm) high-speed (24 Gb/s) p-i-n/HBT front-end photoreceivers

Kyounghoon Yang,, Gutierrez-Aitken, A.L., Xiangkun Zhang,, Haddad, G.I., Bhattacharya, P.

Journal:

Journal of Lightwave Technology

Année:

1996

Langue:

english

Fichier:

PDF, 1.05 MB

english, 1996

39

[IEEE 61st Device Research Conference - Salt Lake City, UT, USA (23-25 June 2003)] 61st Device Research Conference. Conference Digest (Cat. No.03TH8663) - Metamorphic 6.0 Å In/sub 0.86/Al/sub 0.14/As/In/sub 0.86/Ga/sub 0.14/As double heterojunction bipolar transistors

Monier, C., Cavus, A., Sandhu, R., Sawdai, D., Lange, M., Gambin, V., Block, T., Gutierrez-Aitken, A.

Année:

2003

Langue:

english

Fichier:

PDF, 165 KB

english, 2003

40

[IEEE Conference Digest [Late News Papers volume included]Device Research Conference, 2004. 62nd DRC. - Notre Dame, IN, USA (June 21-23, 2004)] Conference Digest [Late News Papers volume included]Device Research Conference, 2004. 62nd DRC. - Planarized InP/InGaAs heterojunction bipolar transistors wlth f/sub MAX/ < 500 GHz

Sawdai, D., Chang, P.C., Gambin, V., Zeng, X., Yamamoto, J., Loi, K., Leslie, G., Barsky, M., Gutierrez-Aitken, A., Oki, A.

Année:

2004

Langue:

english

Fichier:

PDF, 116 KB

english, 2004

41

[IEEE 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) - Santa Barbara, CA, USA (27-31 March 1994)] Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) - High bandwidth InAlAs/InGaAs PIN-HBT monolithically integrated photoreceiver

Gutierrez-Aitken, A.L., Cowles, J., Bhattacharya, P., Haddad, G.I.

Année:

1994

Langue:

english

Fichier:

PDF, 334 KB

english, 1994

42

[JEDC Solid State Technol. Assoc 1999 GaAs Reliability Workshop. Proceedings - Monterey, CA, USA (17 Oct. 1999)] 1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459) - Reliability performance of components and ICs from a production 1 μm GaAs HBT process

Yamada, F.M., Oki, A.K., Streit, D.C., Hikin, B.L., Kaneshiro, E.N., Lammert, M.D., Tran, L.T., Block, T.R., Grossman, P.C., Scarpulla, J.R., Gutierrez-Aitken, A.L.

Année:

1999

Langue:

english

Fichier:

PDF, 339 KB

english, 1999

43

[IEEE GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 - Baltimore, MD, USA (21-24 Oct. 2001)] GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) - InP and GaAs components for 40 Gbps applications

Streit, D., Lai, R., Gutierrez-Aitken, A., Siddiqui, M., Allen, B., Chau, A., Beale, W., Oki, A.

Année:

2001

Langue:

english

Fichier:

PDF, 328 KB

english, 2001

44

Highest efficiency, linear X-band performance using InP DHBTs - 48% PAE at 30 dB C/IM3

Kehias, L., Jenkins, T., Quach, T., Watson, P., Welch, R., Worley, R., Oki, A.K., Yen, H.C., Gutierrez-Aitken, A., Okamura, W., Kaneshiro, E.

Journal:

IEEE Microwave and Wireless Components Letters

Année:

2001

Langue:

english

Fichier:

PDF, 90 KB

english, 2001

45

[IEEE 2003 IEEE Topical Conference on Wireless Communication Technology - Honolulu, HI, USA (15-17 Oct. 2003)] Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's - Design of a 49-GHz AlSb/InAs HEMT monolithic grid oscillator

Song, C., Shiroma, W.A., Tsai, R., Padmanabhan, K., Bayuk, B., Gutierrez-Aitken, A.

Année:

2003

Langue:

english

Fichier:

PDF, 101 KB

english, 2003

46

[IEEE International Conference on Indium Phosphide and Related Materials, 2005. - Glasgow, Scotland (May 8-12, 2005)] International Conference on Indium Phosphide and Related Materials, 2005. - Vertical scaling of planarized InP/InGaAs heterojunction bipolar transistors with f/sub T/< 350 GHz and f/sub max/ < 500 GHz

Sawdai, D., Chang, P.C., Gambin, V., Zeng, X., Wang, J., Barsky, M., Chan, B., Oyama, B., Gutierrez-Aitken, A., Oki, A.

Année:

2005

Langue:

english

Fichier:

PDF, 732 KB

english, 2005

47

[IEEE Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM - Nara, Japan (14-18 May 2001)] Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) - High performance, high yield InP DHBT production process for 40 Gbps applications

Sawdai, D., Kaneshiro, E., Gutierrez-Aitken, A., Grossman, P.C., Sato, K., Kim, W., Leslie, G., Eldredge, J., Block, T., Chin, P., Tran, L., Oki, A.K., Streit, D.C.

Année:

2001

Langue:

english

Fichier:

PDF, 388 KB

english, 2001

48

[IEEE GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1988 - Atlanta, GA, USA (1-4 Nov. 1998)] GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) - High IP3-low DC power 44 GHz InP-HBT amplifier

Kobayashi, K.W., Cowles, J., Tran, L.T., Gutierrez-Aitken, A., Nishimoto, M., Elliott, J., Oki, A.K., Strelt, D.C.

Année:

1998

Langue:

english

Fichier:

PDF, 324 KB

english, 1998

49

[IEEE 2003 International Semiconductor Device Research Symposium - Washington, DC, USA (2003.12.10-2003.12.12)] International Semiconductor Device Research Symposium, 2003 - Advanced substrate/buffer layer polishing techniques to optimize the growth and performance of 6.1Angstrom InAs HBTs

Goorsky, M.S., Noori, A.M., Sandhu, R.S., Hayashim, S.L., Mescrole, E.D., Lange, M., Cavus, A., Monier, C., Hsing, R., Sawdai, D., Wojtowicz, M., Block, T.R., Gutierrez-Aitken, A.

Année:

2003

Langue:

english

Fichier:

PDF, 137 KB

english, 2003

50

[IEEE International Conference on Indium Phosphide and Related Materials, 2005. - Glasgow, Scotland (May 8-12, 2005)] International Conference on Indium Phosphide and Related Materials, 2005. - Materials and device properties of ultra-thin 6.0 Å IN/sub X/AL/sub 1-X/AS graded buffer layers and HBTs

Sandhu, R., Hayashi, S., Noori, A.M., Goorsky, M., Cavus, A., Monier, C., Lange, M., Gutierrez-Aitken, A.

Année:

2005

Langue:

english

Fichier:

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english, 2005